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2SC4512
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 80 6 6 3 50(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Audio and General Purpose
(Ta=25C) Ratings 10max 10max 80min 50min 0.5max 20typ 110typ V MHz pF
12.0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=5A, IB=0.2A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
External Dimensions MT-25(TO220)
3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
16.00.7
V
8.80.2
a b
o3.750.2
O(50 to100), P(70 to140), Y(90 to180)
2.5 BCE
4.0max
1.35
0.65 +0.2 -0.1 2.5 1.4
www..com sTypical Switching Characteristics (Common Emitter)
VCC (V) 30 RL () 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.3 ton (s) 0.16typ tstg (s) 2.60typ tf (s) 0.34typ
Weight : Approx 2.6g a. Part No. b. Lot No.
IC - VCE Characteristics (Typical)
0m A
15 0m A
1 m 00 A
A 80m
VCE( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 3
I C - VBE Temperature Characteristics (Typical)
6 (V CE= 4V)
6
20
Collector Current I C (A)
50 mA
Collector Current I C( A)
4
2
4
30mA
Cas e Te mp (Cas e Tem ) p)
I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0
0
0
1
2
3
4
-30C
25C
125
IB=10mA
C (
(Case
2
20mA
1
2
1 Base-Emittor Voltage V B E( V)
Temp
)
2
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
(V C E= 4V) 300 DC Curr ent Gain h F E DC Cur rent Gain h FE 200 125C
(VCE=4V)
j - a( C/W)
hFE - IC Characteristics (Typical)
hFE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
5
100
25C
100
Typ
-30C 50
Transient Thermal Resistance
1
50
0.5 0.4 1 10 100 Time t(ms) 1000 2000
30 0.02
0.1
0.5
1
56
20 0.02
0.1
0.5
1
56
Collector Current I C( A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(V C E= 12V) 40 20 10 Cu t-off Fre quen cy f T( M H Z) 5 30 Collector Curre nt I C( A)
Safe Operating Area (Single Pulse)
50
10
P c - T a Derating
s
Ma xim um Powe r Dissipation P C (W)
100ms
m
40
W ith
DC
In
Typ
fin
30
ite he
20
1 0.5
at si nk
20
10
Without Heatsink Natural Cooling 0.1
10 Without Heatsink 0 25 50 75 100 125 150
0 -0.02
-0.1
-1
-6
0.05 3
5
10
50
100
2 0
Emitter Current I E( A)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
112

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